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SGP06N60, SGD06N60,
Fast IGBT in NPT-technology
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
SGB06N60 SGU06N60
C
G
E
P-TO-251-3-1 (I-PAK) (TO-251AA)
P-TO-252-3-1 (D-PAK) (TO-252AA)
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D-PAK) (TO-263AB)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP06N60 SGB06N60 SGD06N60 SGU06N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 6 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Tj , Tstg -55...+150 C
1)
VCE 600V
IC 6A
VCE(sat) 2.3V
Tj 150C
Package TO-220AB TO-263AB TO-252AA(DPAK) TO-251AA(IPAK)
Ordering Code Q67040-S4450 Q67040-S4448 Q67041-A4709 Q67040-S4449
Symbol VCE IC
Value 600 12 6.9
Unit V A
ICpul s VGE EAS
24 24 20 34 V mJ
tSC Ptot
10 68
s W
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SGP06N60, SGD06N60,
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
SGB06N60 SGU06N60
Max. Value Unit
Symbol
Conditions
RthJC RthJA RthJA TO-251AA TO-220AB TO-252AA TO-263AB
1.85 75 62 50 40
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 6 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 25 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 3 Typ. 2.0 2.3 4 4.2 350 38 23 32 7 60 max. 2.4 2.8 5
Unit
V
A 20 700 100 420 46 28 42 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 6 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =6 A V G E = 15 V T O - 22 0A B V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Jul-02
1)
2
SGP06N60, SGD06N60,
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G =50 , 1) L = 18 0 nH , 1) C = 25 0 pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions min.
SGB06N60 SGU06N60
Value typ. 25 18 220 54 0.110 0.105 0.215 max. 30 22 264 65 0.127 0.137 0.263 mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C =6 A , V G E = 0/ 15 V , R G = 50 , 1) L = 18 0 nH , 1) C = 25 0 pF Energy losses include "tail" and diode reverse recovery. 24 17 248 70 0.167 0.153 0.320 29 20 298 84 0.192 0.199 0.391 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 3 Jul-02
SGP06N60, SGD06N60,
Ic
30A
SGB06N60 SGU06N60
t p =2 s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A 15 s
20A T C =80C
50 s 1A 200 s 1ms DC
10A
T C =110C
Ic
0A 10Hz
0.1A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 50)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
15A 80W
60W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
10A
40W
5A
20W
0W 25C
50C
75C
100C
125C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Jul-02
SGP06N60, SGD06N60,
20A
SGB06N60 SGU06N60
20A
15A
15A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
VGE=20V 15V 13V 11V 9V 7V 5V
VGE=20V 10A 15V 13V 11V 9V 7V 5V
10A
5A
5A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
18A 16A
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
20A
4.0V
3.5V
IC = 12A
IC, COLLECTOR CURRENT
14A 12A 10A 8A 6A 4A 2A 0A 0V
3.0V
2.5V
IC = 6A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Jul-02
SGP06N60, SGD06N60,
t d(off)
SGB06N60 SGU06N60
td(off)
t, SWITCHING TIMES
tf
t, SWITCHING TIMES
100ns
tf 100ns
t d(on)
t d(on)
tr tr 10ns 0A 3A 6A 9A 12A 15A 10ns 0 50 100 150
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 50, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 6A, Dynamic test circuit in Figure E)
5.5V
t d(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V -50C 0C 50C 100C 150C typ. max.
t, SWITCHING TIMES
100ns tf
td(on)
tr 10ns 0C 50C 100C 150C
min.
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 6A, RG = 50, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.25mA)
6
Jul-02
SGP06N60, SGD06N60,
0.8mJ
*) Eon and Ets include losses due to diode recovery.
SGB06N60 SGU06N60
E ts *
0.6mJ
*) Eon and Ets include losses due to diode recovery.
E ts *
E, SWITCHING ENERGY LOSSES
0.6mJ
E, SWITCHING ENERGY LOSSES
0.4mJ
0.4mJ E on * E off 0.2mJ
E off E on *
0.2mJ
0.0mJ 0A
3A
6A
9A
12A
15A
0.0mJ 0
50
100
150
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 50, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 6A, Dynamic test circuit in Figure E)
0.4mJ
*) Eon and Ets include losses due to diode recovery.
ZthJC, TRANSIENT THERMAL IMPEDANCE
E ts *
D=0.5 10 K/W 0.2 0.1 0.05 10 K/W 0.02
R,(K/W) 0.705 0.561 0.583
R1
-1 0
E, SWITCHING ENERGY LOSSES
0.3mJ
0.2mJ
E on *
E off 0.1mJ
10 K/W
-2
0.01
, (s) 0.0341 3.74E-3 3.25E-4
R2
single pulse 10 K/W 1s
-3
0.0mJ 0C
C 1 = 1 / R 1 C 2 = 2 /R 2
50C
100C
150C
10s 100s
1m s
10m s 100m s
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 6A, RG = 50, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Jul-02
SGP06N60, SGD06N60,
25V 1nF
SGB06N60 SGU06N60
20V
C iss
VGE, GATE-EMITTER VOLTAGE
120V 15V
480V
C, CAPACITANCE
100pF
10V
C oss
5V C rss 0V 0nC 15nC 30nC 45nC 10pF 0V 10V 20V 30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 6A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
100A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
11V 12V 13V 14V 15V
tsc, SHORT CIRCUIT WITHSTAND TIME
20 s
80A
15 s
60A
10 s
40A
5 s
20A
0 s 10V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Jul-02
SGP06N60, SGD06N60,
TO-220AB
symbol
SGB06N60 SGU06N60
dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 min
[inch] max 0.4016 0.0512 0.0630 0.0421
A B C D E F G H K L M N P Q R S T U V W X Y Z
9.80 0.70 1.00 1.03
0.3858 0.0276 0.0394 0.0406
2.54 typ. 0.65 0.85
0.1 typ. 0.0256 0.0335
5.08 typ. 4.30 1.17 9.05 2.30 4.50 1.37 9.45 2.50
0.2 typ. 0.1693 0.0461 0.3563 0.0906 0.1772 0.0539 0.3720 0.0984
15 typ. 0.00 4.20 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 0.20 5.20 3.00 0.60
0.5906 typ. 0.0000 0.1654 0.0945 0.0157 0.0079 0.2047 0.1181 0.0236
8 max
8 max
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
9
Jul-02
SGP06N60, SGD06N60,
P-TO252 (D-Pak)
symbol min A B C D E F G H K L M N P R S T U 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 6.40 5.25 (0.65) 0.63
SGB06N60 SGU06N60
dimensions [mm] max 6.73 5.50 (1.15) 0.89 2.28 2.39 0.98 1.21 6.23 10.40 0.58 1.15 1.02 min 0.2520 0.2067 0.0248 inch] max 0.2650 0.2165 0.0350
(0.0256) (0.0453) 0.2520 0.0862 0.0941 0.0299 0.0354 0.2350 0.3701 0.0181 0.0343 0.0201 0.1969 0.1642 0.0102 0.0386 0.0476 0.2453 0.4094 0.0228 0.0453 0.0402 -
P-TO251 (I-Pak)
symbol min A B C D E F G H K L M N 6.47 5.25 4.19 0.63 [mm]
dimensions [inch] max 6.73 5.41 4.43 0.89 min 0.2547 0.2067 0.1650 0.0248 max 0.2650 0.2130 0.1744 0.0350
2.29 typ. 2.18 2.39 0.76 1.01 5.97 9.14 0.46 0.98 0.86 1.11 6.23 9.65 0.56 1.15
0.0902 typ. 0.0858 0.0941 0.0299 0.0398 0.2350 0.3598 0.0181 0.0386 0.0339 0.0437 0.2453 0.3799 0.0220 0.0453
10
Jul-02
SGP06N60, SGD06N60,
1
Tj (t) p(t)
SGB06N60 SGU06N60
2
r2 r1
n
rn
r1
r2
rn
TC
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =250pF.
11
Jul-02
SGP06N60, SGD06N60,
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please!
SGB06N60 SGU06N60
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
12
Jul-02

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